雷建明

发布时间:2021-03-24浏览次数:1550


   

   

雷建明,198204,博士,2019年毕业于南京大学电子科学与技术学院,随后加入南京工业职业技术大学。

自动化教学部教师,讲师,主讲《电力电子技术》

指导学生参加创新创业大赛获省级及以上荣誉4次。

申请发明专利十余项,发表一作SCI论文2篇。

主持纵横向项目多个。

十年高频硬件电路设计工作经验。主要从事高频硬件电路设计、第三代宽禁带半导体应用和柔性电子器件研究。已发表论文9篇;已获授权发明专利14项,其中2项PCT发明专利;主持基金项目2项,参与基金项目1项。


    期刊论文:

  • J. M. Lei, R. Wang, G. Yang, J. Wang, D. J. Chen*, H. Lu, R. Zhang and Y. D. Zheng, Investigation on the Activation Energy of Device Degradation in AlGaN/GaN HEMTs for High-Frequency Application, IEEE J. Electr. Dev.Society (SCI中科院三区影响因子2.696 ), vol. 7, pp. 417-424, March 2019. doi: 10.1109/JEDS.2019.2906353.

  • J. M. Lei, R. Wang, G. Yang, J. Wang, F. L. Jiang, D. J. Chen*, H. Lu, R. Zhang and Y. D. Zheng,
    Precise Extraction of Dynamic Rdson under High Frequency and High Voltage by A Double-Diode-Isolation Method, IEEE J. Electr. Dev.Society (SCI中科院三区影响因子2.696 ), vol. 7, pp. 690-695. July 2019. doi: 10.1109/JEDS.2019.2927608.

  • K. Sim, Z. L. Rao, Z. Zou, F. Ershad, J. M. Lei, A. Thukral, F. Ershad, J. Chen, Q. A. Huang, J. L. Xiao and C. J. Yu*, Metal Oxide Semiconductor Nanomembrane based Soft Unnoticeable Multifunctional Electronics for Wearable Human-Machine Interfaces, Science Advances (SCI中科院Nature子刊,影响因子11.511 ), 5, eaav9653(2019).doi: 10.1126/sciadv.aav9653.

  • J. Wang,J. M. Lei, G. Yang, J. J. Xue, Q. Cai, D. J. Chen*, H. Lu, R. Zhang and Y. D. Zheng, An Ultra-Sensitive and Selective Nitrogen Dioxide Sensor Based on Novel Monolayer from Theoretical Perspective, Nanoscale (SCI中科院影响因子7.233 ),vol. 10, no. 46, pp. 21936-21943, Dec. 2018. doi: 10.1039/c8nr05568h.

  • J. Wang, Q. Cai,J. M. Lei, G. F. Yang, J. J.  Xue, D. J. Chen*, B. Liu, H. Lu, R. Zhang, and Y. D. Zheng, Performance of Monolayer Blue Phosphorene double-gate MOSFETs from First Principles, ACS Applied Materials & Interfaces (SCI中科院影响因子8.097 ), doi: 10.1021/acsami.9b02192.

  • J. Wang, G. F. Yang, J. J. Xue,J. M. Lei, D. J. Chen*, H. Lu, R. Zhang and Y. D. Zheng, A Reusable and High Sensitivity Nitrogen Dioxide Sensor Based on Monolayer SnSe,IEEE Electr. Dev. Lett. (SCI中科院影响因子3.433), vol. 39, no. 4, pp. 599-602, Apr. 2018. doi: 10.1109/LED.2018.2806367.

  • J. Wang, G. F. Yang, J. J. Xue, J. M. Lei, Q. Cai, D. J. Chen*, H. Lu, R. Zhang and Y. D. Zheng, High Sensitivity and Selectivity of AsP Sensor in Detecting SF6 Decomposition Gases, Scientific Reports (SCI中科院三区影响因子4.122), vol. 8, no. 1, pp. 12011-12016, Aug. 2018. doi: 10.1038/s41598-018-30643-y.

  • T. Tao, T. Zhi, B. Liu*, J. M. Lei, N. Dai, Z. L. X, Y. G. Zhou, D. J. Chen, H. Lu, R. Zhang, Observation and Modeling of LeakageCurrent in AlGaN Ultraviolet Light Emitting Diodes, IEEE Photonics Tech. Lett. (SCI中科院三区影响因子2.446), vol. 31, no. 21, pp. 1697-1700, Nov. 2019. doi: 10.1109/LPT.2019.2942612.

  • Y. Dong, Y. Liu, Q. Cai, J. M. Lei, D. J. Chen*, H. Lu, R. Zhang and Y. D. Zheng, Enhanced stability and sensitivity of AlGaN/GaN-HEMTs pH sensor by reference device,IEEE Sensors Journal (SCI中科院影响因子3.073), Print ISSN: 1530-437X, Online ISSN: 1558-1748, doi:10.1109/JSEN.2020.3047204.